Author/Authors :
Veen، A. Van نويسنده , , Schut، H. نويسنده , , Huis، M.A. van نويسنده , , Eijt، S.W.H. نويسنده , , Kooi، B.J. نويسنده , , Hosson، J.Th.M. De نويسنده ,
Abstract :
The band gap as well as the optical and structural properties of semiconductor CdSe nanoclusters change as a function of the nanocluster size. Embedded CdSe nanoclusters in MgO were created by means of sequential Cd and Se ion implantation followed by thermal annealing. Changes during annealing were monitored using optical absorption and positron annihilation spectroscopy. High-resolution TEM on cross-sections after annealing at a temperature of 1300 K showed that clusters with a size below 5 nm have the high-pressure rock-salt structure and are in a cube-on-cube orientation relation with MgO, whereas clusters larger than 5 nm adopt the stable wurtzite crystal structure and were observed in two different orientation relations with MgO.
Keywords :
Compound semiconductors , high-resolution electron microscopy , positron annihilation , precipitation , Phase transformations