Re-evaluation of the Ibe–Lucke growth selection experiment in a Fe–Si single crystal

Selective growth effects during primary recrystallization have been widely discussed but so far no convincing proof has been provided. In the search for a more fundamental understanding of texture formation during the growth stage of static recrystallization, the historic growth experiment by Ibe and Lucke was re-evaluated by making use of modern electron backscattering diffraction equipment. Moreover, the non-random character of the nucleation texture was considered and the misorientations between the recrystallised grains and the single crystal matrix were examined in the 3D Rodrigues-Frank misorientation space. It was seen that the volume fraction of misorientations around the exact (left angle bracket)1 1 0(right angle bracket)26.5° misorientation increased by a factor of 10 during growth. This is believed to provide unambiguous evidence for the occurrence of selective growth during the recrystallization process under consideration.