The high temperature oxidation behavior of reaction-bonded silicon carbide

The high-temperature oxidation behavior of reaction-bonded silicon carbide containing 11.5 wt.% free silicon is investigated in air at 1300°C. The experimental results show that the oxidation curve of the material obeys a logarithmic equation due to the crystallization of amorphous silica and cracking of the oxide scale. The room temperature flexural strength of the specimens after oxidizing tends to increase first and then decrease with oxidation time.