• Title of article

    The influence of Si–O–Zr bonds on the crystal-growth inhibition of zirconia prepared by the glycothermal method

  • Author/Authors

    Sirarat Kongwudthiti، نويسنده , , Piyasan Praserthdam، نويسنده , , Waraporn Tanakulrungsank، نويسنده , , Masashi Inoue، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    186
  • To page
    189
  • Abstract
    SiO2-modified ZrO2 with the Si/Zr ratios of 0.04, 0.08, and 0.15 were prepared by the reaction of zirconium n-propoxide and tetraethyl orthosilicate in 1,4-butanediol. The products were characterized by FT-IR and XRD. The FT-IR spectra exhibit the presence of Si–O–Zr bonds formed during the reaction, indicating a high degree of powder homogeneity. The presence of Si–O–Zr bonds retards the crystal growth upon calcination.
  • Keywords
    SiO2-modified ZrO2 , FT-IR , Crystal growth , Glycothermal method , Si–O–Zr bonds , Si–O–Si bonds
  • Journal title
    Journal of Materials Processing Technology
  • Serial Year
    2003
  • Journal title
    Journal of Materials Processing Technology
  • Record number

    1177471