Title of article
A novel nano-Moiré method with scanning tunneling microscope (STM)
Author/Authors
Zhanwei Liu، نويسنده , , Huimin Xie، نويسنده , , Daining Fang، نويسنده , , Haixia Shang، نويسنده , , Fulong Dai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
77
To page
82
Abstract
In this paper, a new STM nano-Moiré method is presented which allows quantitative analysis to nanoscopic deformation of matter. In the measurement, Moiré patterns are generated by interfering the scanning lines of STM with the atomic lattice of crystal material. The measurement principles of STM nano-Moiré and experimental techniques are described in detail. In addition, a grating replication method is also developed. The residual strain around an inclusion or defect on a high-orientated pyrolytic graphite (HOPG) sample is measured using this method. The successful experimental results demonstrate the feasibility of this method and also verify the method can offer a high sensitivity for displacement measurement with nanometer spatial resolution.
Keywords
Scanning tunneling microscope , Crystal lattice , Nano-metrology , Nano-Moiré
Journal title
Journal of Materials Processing Technology
Serial Year
2004
Journal title
Journal of Materials Processing Technology
Record number
1178343
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