Statistical modeling of the electrical characteristics for HfO2 thin films grown by MOMBE for high-k dielectric applications

In this paper, the multiple regression model of electrical characteristics for HfO2 thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of HfO2. The input process parameters were extracted by analyzing the process conditions and the characterization of the films. X-ray diffraction was measured to analyze the variation of the characteristics on the various process conditions. In order to build the process model, the multiple regression models were carried out using the design of experiments. The analysis of variance and the effect plots were used to analyze the significance level and the relationship between the process parameters and the responses.