High quality p-type ZnO films grown by low pressure plasma-assisted MOCVD with N2O rf plasma doping source

N-doped ZnO films have been grown on (0 0 0 1) sapphire substrates by a novel low-pressure plasma-assisted metalorganic chemical vapor deposition system using N2O plasma as doping source. X-ray photoelectron spectroscopy analysis confirmed the incorporation of N into the ZnO films. Room temperature p-type conduction was achieved for the N-doped ZnO film at suitable substrate temperatures, with the resistivity of 8.71 Ω cm, hole concentration up to 3.44 × 1017 cm−3 and mobility of 2.09 cm2/V s. In the photoluminescence (PL) measurement, a strong near-band-edge emission was observed for both undoped and N-doped films, while the deep-level emission was almost undetectable, which confirmed that the obtained ZnO-based films were well close to stoichiometry and of optically high quality.