Title of article :
Structure and luminescent properties of GaN nanorods grown by magnetron sputtering and ammoniating technique
Author/Authors :
Jinhua Chen، نويسنده , , Chengshan Xue، نويسنده , , Huizhao Zhuang، نويسنده , , Hong Li، نويسنده , , Lixia Qin، نويسنده , , Zhaozhu Yang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure. Photoluminescence spectrum shows the products possess good luminescent properties. The growth mechanism of GaN nanorods is also discussed.
Keywords :
Nanorods , Single crystal , GaN , Luminescence
Journal title :
Journal of Materials Processing Technology
Journal title :
Journal of Materials Processing Technology