• Title of article

    Structure and luminescent properties of GaN nanorods grown by magnetron sputtering and ammoniating technique

  • Author/Authors

    Jinhua Chen، نويسنده , , Chengshan Xue، نويسنده , , Huizhao Zhuang، نويسنده , , Hong Li، نويسنده , , Lixia Qin، نويسنده , , Zhaozhu Yang، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    255
  • To page
    258
  • Abstract
    A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure. Photoluminescence spectrum shows the products possess good luminescent properties. The growth mechanism of GaN nanorods is also discussed.
  • Keywords
    Nanorods , Single crystal , GaN , Luminescence
  • Journal title
    Journal of Materials Processing Technology
  • Serial Year
    2008
  • Journal title
    Journal of Materials Processing Technology
  • Record number

    1185159