Measurement by differential scanning calorimetry of specific heat capacity variation due to crystallization: Application to amorphous silicon

Four methods for the measurement of cp are analyzed with the aim of applying them to the quantification of the small cp difference between the amorphous and crystalline states of silicon. It is concluded that conventional differential scanning calorimetry (DSC) is better suited than modulated DSC (MDSC) for this purpose. For silicon, image is equal to 1.1 J/K/mol at 600 °C and diminishes steadily below 0.5 J/K/mol at 100 °C. Additionally, the variation of cp due to dehydrogenation has also been quantified.