Detection Properties and Radiation Damage Effects in SiC Diodes Irradiated with Light Ions Original Research Article

The detection properties of SiC diodes of different dopant concentration irradiated with light ions are investigated. Moreover, the radiation damage, produced by irradiating SiC diodes with 16O ions at 35.2 MeV, is evaluated from the degradation of the signal pulse-height as a function of the ions fluence.