Title of article :
FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES
Author/Authors :
Simpson، William.C. نويسنده , , Yarmoff، Jory.A. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
28
From page :
527
To page :
554
Abstract :
It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF2, Cl2, Br2, and I2) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This reviewexamines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.
Keywords :
semiconductor processing , Gallium arsenide , fluorine , Chlorine
Journal title :
Annual Review of Physical Chemistry
Serial Year :
1996
Journal title :
Annual Review of Physical Chemistry
Record number :
121702
Link To Document :
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