Title of article :
Structural and morphological changes of P3HT films in the planar geometry of an OFET device under an applied electric field
Author/Authors :
Souren Grigorian، نويسنده , , Davide Tranchida، نويسنده , , Dmitriy Ksenzov، نويسنده , , Franz Sch?fers، نويسنده , , Holger Sch?nherr، نويسنده , , Ullrich Pietsch، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
8
From page :
2189
To page :
2196
Abstract :
We show that both the morphology and crystal structure of regioregular poly(3-hexylthiophene) (RR-P3HT) films in organic field effect transistor (OFET) devices with top surface contacts are altered, when an electric field is applied. Grazing incidence X-ray diffraction (GIXD) analysis reveals a dramatic decrease in structural order in the non-linear current regime and, by contrast, much less pronounced structural changes of the (h 0 0) peaks in the linear current regime. Using for the first time resonance soft X-ray reflectivity (RSoXR) on RR-P3HT to avoid radiation damaged and to enhance the scope of the attained depth resolved information, we show that these changes are located in a several tens of nanometer thin sub-surface layer of the active polymer in the device. Furthermore, the RSoXR data reveal that the changes are strongly related to the C 1s → π∗ and C 1s → σ∗-resonances. In situ AFM measurements of the RR-P3HT device surface support the reciprocal space analysis results by showing a substantial softening and lateral expansion of the RR-P3HT films, when 20 V are applied between the contacts. These morphological and structural changes are partially reversible in nature.
Keywords :
AFM , organic semiconductors , Conducting polymer films , RSoXR
Journal title :
European Polymer Journal(EPJ)
Serial Year :
2011
Journal title :
European Polymer Journal(EPJ)
Record number :
1228932
Link To Document :
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