Author/Authors :
Li Liang، نويسنده , , Zhang Rong، نويسنده , , Xie Zili، نويسنده , , Zhang Yu، نويسنده , , Xiu Xiangqian، نويسنده , , Liu Bin، نويسنده , , Zhou Jianjun and T.T. Chow، نويسنده , , Chen Lin، نويسنده , , Yu Huiqiang، نويسنده , , Han Ping، نويسنده , , Gong Haimei، نويسنده , , Zheng Youdou، نويسنده ,
Abstract :
The electrical, structure and optical properties of Si-doped Al0.5Ga0.5N epilayers with a thickness of about 0.5 μ grown on sapphire substrates using an AIN buffer by metalorganic chemical vapor deposition were reported. Hall-effect measurements showed that n-type Al0.5Ga0.5N was achieved achieved with an electron concentration of 1.2 × 1019 cm−3 and mobility of 12 cm2·Vs−1 at room temperature. The electron concentration increases with an increase of Si doping level. Lattice constant of c and Raman shift of Si-doped Al0.5Ga0.5N epilayers with various SiH4 flow rates was studied by X-ray diffraction (XRD) and Raman scattering spectrum. With increasing SiH4 flow rate, the decrease of the lattice constant of c and the frequency of E2 phonon implies gradual relaxation of the stress in the epilayers.
