Optimization of BaMgAl10O17:Eu2+ phosphors by the substitution of Si-N bonds for Al-O bonds

We proposed a simple method to improve the thermal stability of BaMgAl10O17:Eu2+ (BAM) phosphors by the substitution of Si-N bonds for Al-O bonds in the host lattice. Both photoluminescence properties and thermal stability under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation could be significantly improved through Si-N incorporation. After thermal degradation at 600 °C for 1 h in air atmosphere, the Si-N doped sample (Ba0.88Eu0.12MgAl9.97Si0.03O16.97N0.03) had the highest emission intensity which was 22% and 40% stronger than that of as-received sample under UV and VUV excitation, respectively. This could be attributed to the stable local structure surrounding the Eu2+ ions and the lower electronegativity of nitrogen.