Author/Authors :
V.V. Sidsky، نويسنده , , A.V. Semchenko، نويسنده , , A.G. Rybakov، نويسنده , , V.V. Kolos، نويسنده , , A.S. Turtsevich، نويسنده , , A.N. Asadchyi، نويسنده , , W. Strek، نويسنده ,
Abstract :
This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory (FRAM). La-doped SrBi2Ta2O9 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface (AFM), crystallization behavior (XRD) during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films (Theating=800 °C). Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.
Keywords :
Sol-gel method , Non-volatile memory , Ferroelectric thin films , lanthanum ion , rare earths
