• Title of article

    Line broadening studies for isoelectronic divalent and trivalent lanthanides

  • Author/Authors

    A.P. Vink، نويسنده , , M.A Reijme، نويسنده , , A. Meijerink، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    9
  • From page
    189
  • To page
    197
  • Abstract
    Temperature-dependent line broadening measurements are reported for transitions on Sm2+ and Eu3+ (4f 6) and Eu2+ and Gd3+ (4f 7). Analysis of the results shows that the electron–phonon coupling parameter ᾱ derived from a fit of the line width data to a two-phonon Raman dephasing process are similar for the divalent and trivalent lanthanides. The low energy of the opposite parity 4f n−15d1 state for the divalent lanthanides does not result in a significant difference in temperature-dependent line broadening. This indicates that an extrinsic Raman two-phonon dephasing process involving an opposite parity intermediate state is not responsible for the observed line broadening.
  • Keywords
    Electron–phonon coupling , Lanthanides , Line broadening
  • Journal title
    Journal of Luminescence
  • Serial Year
    2000
  • Journal title
    Journal of Luminescence
  • Record number

    1258423