Photoluminescent and structural properties of GaN thin films obtained by radical-beam gettering epitaxy on porous GaAs (0 0 1)

Cubic GaN (c-GaN) layers were grown on porous GaAs (0 0 1) substrate by radical-beam gettring epitaxy. X-ray difraction and photoluminescence measurement indicate that the both single crystalline cubic GaN and hexagonal GaN was successfully grown on the porous GaAs (0 0 1) substrate.