Title of article
Photoluminescent and structural properties of GaN thin films obtained by radical-beam gettering epitaxy on porous GaAs (0 0 1)
Author/Authors
V.V. Kidalov، نويسنده , , G.A. Sukach، نويسنده , , A.O. Petukhov، نويسنده , , A.S. Revenko، نويسنده , , E.P. Potapenko، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
3
From page
712
To page
714
Abstract
Cubic GaN (c-GaN) layers were grown on porous GaAs (0 0 1) substrate by radical-beam gettring epitaxy. X-ray difraction and photoluminescence measurement indicate that the both single crystalline cubic GaN and hexagonal GaN was successfully grown on the porous GaAs (0 0 1) substrate.
Keywords
Porous GaAs , Cubic GaN , Photoluminescence , Radical-beam gettering epitaxy , X-ray diffraction , High-frequency discharge
Journal title
Journal of Luminescence
Serial Year
2003
Journal title
Journal of Luminescence
Record number
1258853
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