Photoluminescence analysis on Teflon bulk and Teflon–like films grown by Ion-beam sputtering

We have investigated the photoluminescence of Teflon-like films obtained by ion-beam sputtering. We show that Teflon material used for the target contains π-C bonds. The sputtering increases the number of these bonds inside the films. By changing some experimental parameters it is possible to control centres of radiative recombination obtaining also a Teflon film without this centres.