Author/Authors :
Yueh-Chien Lee، نويسنده , , Sheng-Yao Hu، نويسنده , , Walter Water، نويسنده , , Kwong-Kau Tiong، نويسنده , , Zhe-Chuan Feng، نويسنده , , Yen-Ting Chen، نويسنده , , Jen-Ching Huang، نويسنده , , Jyh-Wei Lee*، نويسنده , , Chia-Chih Huang، نويسنده , , Jyi-Lai Shen، نويسنده , , Mou-Hong Cheng، نويسنده ,
Abstract :
The structural and optical properties of ZnO films deposited on Si substrate following rapid thermal annealing (RTA) have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. After RTA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, an increase of the intensity and narrowing of the full-width at half-maximum (FWHM) of the (0 0 2) diffraction peak of the as-grown ZnO film. AFM images show roughening of the film surface due to increase of grain size after RTA. The PL spectrum reveals a significant improvement in the UV luminescence of ZnO films following RTA at 800 °C for 1 min.
Keywords :
Zinc oxide , Annealing , X-ray diffraction , Photoluminescence
