Confined electronic structure in GaAs quantum dots

The energy levels of electrons and holes confined in GaAs/AlGaAs quantum dots (QDs) are studied using photoluminescence (PL) measurements under high pressure, as well as micro-PL (μPL) measurements of single QDs. From the high-pressure measurements, the band lineups of the GaAs QD are determined. The GaAs QD valence-band heavy-hole ground-state-first excited-state separation is 24 meV. From the μPL measurements, the GaAs QD conduction band electron ground state-first excited state separation is 96 meV.