Author/Authors :
N.D. Nedeoglo، نويسنده , , A.N. Avdonin، نويسنده , , G.N. Ivanova، نويسنده , , D.D. Nedeoglo، نويسنده , , G.V. Kolibaba، نويسنده , , V.P. Sirkeli، نويسنده ,
Abstract :
Photoluminescence spectra of ZnSe single crystals doped with Au during a long high-temperature treatment of as-grown crystals in Zn+Au or Se+Au melts are investigated in the temperature range from 83 to 300 K. The Au-doping from Zn+Au melt leads to the formation of both simple defects (Aui donors and AuZn acceptors) and acceptor associates (AuZn–Aui). The edge luminescence is attributed to radiative annihilation of Aui and VSe donor-bound excitons. The edge spectra of the crystals doped with Au from Se+Au melt contain the band ascribed to radiative annihilation of AuZn acceptor-bound excitons.
