A potential red phosphor LiGd(MoO4)2:Eu3+ for light-emitting diode application

Eu3+-doped LiGd(MoO4)2 red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu3+ doping concentration on PL intensity was investigated, and the optimum concentration of Eu3+ doped in LiGd(MoO4)2 was found to be 30 mol%. Compared with Y2O2S:0.05Eu3+, Na0.5Gd0.5MoO4:Eu3+ and KGd(MoO4)2:Eu3+, the LiGd(MoO4)2:Eu3+ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu3+ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO4)2:Eu3+ phosphor is a good candidate for LED applications.