Title of article :
TL, OSL and ESR studies on beryllium oxide
Author/Authors :
S. Watanabe، نويسنده , , T.K. Gundu Rao، نويسنده , , P.S. Page، نويسنده , , B.C. Bhatt، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
7
From page :
2146
To page :
2152
Abstract :
Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermoluminescence (TL) and optically stimulated luminescence (OSL) processes in BeO phosphor. Two defect centres were identified in irradiated BeO phosphor by ESR measurements, which were carried out at room temperature and these were assigned to an O− ion and Al2+ centre. The O− ion (hole centre) correlates with the main 190 °C TL peak. The Al2+ centre (electron centre), which acts as a recombination centre, also correlates to the 190 °C TL peak. A third centre, observed during thermal annealing studies, is assigned to an O− ion and is related to the high temperature TL at 317 °C. This centre also appears to be responsible for the observed OSL process in BeO phosphor.
Keywords :
Electron spin resonance (ESR) , BEO , Thermoluminescence (TL) , Optically stimulated luminescence(OSL)
Journal title :
Journal of Luminescence
Serial Year :
2010
Journal title :
Journal of Luminescence
Record number :
1260200
Link To Document :
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