Effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes

We provide a large F–P cavity model to analyze the effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes (VLEDs). It shows that the distance (d) between the active region and the metal reflector has a significant influence on extraction efficiency due to interferences. The maximum in extraction efficiency corresponding to the optimal d is about three times the neighboring minimum. The reflector of different metals is considered in this model and the results show that the optimal d and the value of the maximum in the extraction efficiency are directly related to the type of metal, which can be attributed to varied reflection phase shift and reflectivity on different metals, respectively.