Title of article
Broadband near infrared quantum cutting in Bi–Yb codoped Y2O3 transparent films on crystalline silicon
Author/Authors
Minghao Qu، نويسنده , , Ruzhi Wang، نويسنده , , Yan Chen، نويسنده , , Ying Zhang، نويسنده , , Kaiyu Li، نويسنده , , Hui Yan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
1285
To page
1289
Abstract
By a pulsed laser deposition technique the efficient broadband near-infrared downconversion Bi–Yb codoped crystallization Y2O3 transparent films have been grown successfully on Si (1 0 0) substrates. Upon excitation of ultraviolet photon varying from 300 to 400 nm, the near infrared quantum cutting has been obtained, which is originated from the transitions of the transition-metal Bi3+ 3P1 level to Yb3+ 2F5/2 level. The downconversion quantum efficiency of films is estimated to be 152%. The transparent Y2O3 films may have potential application in enhancing the conversion efficiency of crystalline Si solar cells.
Keywords
Near infrared quantum cutting , Y2O3:Bi , Thickness , Silicon solar cells , Yb transparent films
Journal title
Journal of Luminescence
Serial Year
2012
Journal title
Journal of Luminescence
Record number
1261047
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