Density of states in a cylindrical GaAs/AlxGa1−xAs quantum well wire under tilted laser field

Within the effective-mass approximation the subband electronic levels and density of states in a semiconductor quantum well wire under tilted laser field are investigated. The energies and wave functions are obtained using a finite element method, which accurately takes into account the laser-dressed confinement potential. The density of states obtained in a Greenʹs function formalism is uniformly blueshifted under the laserʹs axial field whereas the transverse component induces an additional non-uniform increase of the subband levels. Our results confirm that the tilted laser field destroys the cylindrical symmetry of the quantum confinement potential and breaks down the electronic statesʹ degeneracy. Axial and transversal effects of the non-resonant laser field on the density of states compete, bringing the attention to a supplementary degree of freedom for controlling the optoelectronic properties: the angle between the polarization direction of the laser and the quantum well wire axis.