Luminescence intensity and dopant concentration in AlN:Tb

The luminescence intensity of Tb3+ embedded in sputter deposited and subsequently annealed AlN shows strong concentration dependence. The intensity of the characteristic green luminescence of Tb3+ rises at low concentrations with rising concentration. At higher concentrations, strong concentration quenching occurs. The optimum concentration range of Tb3+ in AlN was observed to range between 2.5 at% Tb and 3.6 at% Tb. The experimentally evaluated concentration dependence results can be described by a rate equation approach based on available models of luminescence quenching.