Title of article :
Photoluminescence probed minority processes in La2/3Sr1/3MnO3 thin films
Author/Authors :
H.Y. Guo، نويسنده , , Ching-Tarng Liang، نويسنده , , Yia-Chung Chang، نويسنده , , J.G. Lin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
La2/3Sr1/3MnO3 thin films are studied with temperature variable photoluminescence (PL) spectroscopy. Two emission peaks are assigned to the minority carriers related transition processes. The temperature independent 2.526 eV peak is attributed to the charge transfer type inter-band transition, while the redshifted doublet peak around 1.686 eV to the spin flip process. Band structures are obtained within the density functional theory, which show the consistent band gaps with the PL data. The temperature dependence of the intensity of PL emission suggests that these minority carrier processes are relevant to polaron formation.
Keywords :
Colossal magnetoresistance , Electronic structure , Photoluminescence
Journal title :
Journal of Luminescence
Journal title :
Journal of Luminescence