Broadband photoluminescence from pulsed laser deposited Er2O3 films

Photoluminescence (PL) with the bandwidth of 45 nm (1523–1568 nm at the level of 3 dB) was observed in amorphous Er2O3 films grown on to the quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula to determine the dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient of 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. In 5.7 mm-long waveguide amplifier a theory predicts the spectral gain of 20 dB with 1.4 dB peak-to-peak flatness in the bandwidth of 31 nm (1532–1563 nm) when 73% of Er3+ ions are excited from the ground state to the image laser level. Strong broadband PL at room temperature and inherently flat spectral gain promise Er2O3 films for ultra-short high-gain optical waveguide amplifiers and integrated light circuits.