Author/Authors :
Z.Z. Zhang، نويسنده , , D.Z. Shen، نويسنده , , Y.M. Lu، نويسنده , , J.Y. Zhang، نويسنده , , B.H. Li، نويسنده , , D.X. Zhao، نويسنده , , B. Yao، نويسنده , , X.W. Fan، نويسنده ,
Abstract :
Optical properties of ZnO thin films fabricated on GaAs substrate by molecular beam epitaxy method were investigated. The emissions from acceptor-bound exciton and free electron acceptor were enhanced after annealing at 550 °C for 1 h. In the photoluminescence spectra of the annealed sample, donor–acceptor pair emission was confirmed by changing excitation density. Hall measurement indicated that the conductivity of the ZnO thin film converses from n-type to high resistant after thermal diffusion by annealing at 550 °C.
Keywords :
Photoluminescence , ZNO , As diffusion , acceptor
