Author/Authors :
Ying Ding، نويسنده , , Qiang Kan، نويسنده , , Jun-ling Wang، نويسنده , , Jiaoqing Pan، نويسنده , , Fan Zhou، نويسنده , , Wei-xi Chen، نويسنده , , Wei Wang، نويسنده ,
Abstract :
Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared.
