Sol–gel synthesis of ZnS (O,OH) thin films: Influence of precursor and process temperature on its optoelectronic properties

This study investigates the effect of sintering temperature and precursor composition on sol–gel deposition of ZnS (O,OH) on its structural and optoelectronic properties. ZnS (O,OH) thin films were prepared from stoichiometric, excess Zn and excess S precursor solutions. It was found that sintering temperature and precursor composition have strong effect on subsequent optoelectronic properties. From the combined photoluminance (PL) and EDS analysis it was revealed that beyond critical sintering temperature, oxygen incorporation occurs and results in PL emission at around 423 nm.