Preparation and physical properties of luminescent 80GeSe2·(20−x)Sb2Se3·xSb2Tey:Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4

Homogeneous glasses of the system 80GeSe2·(20−x)Sb2Se3·xSb2Tey:0.03Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4 were prepared. The glasses with x=0–3 are very stable without any crystallization for T<600 °C. The Tg values (261–309 °C) and the Egopt values (1.30–1.70 eV) are decreasing with the Te content. The index of refraction is high (2.55–2.73 for 2200 nm), it is increasing with increasing Te content. The Raman spectra revealed presence of GeSe4/2 tetrahedra, Ge2Se6/2 bi-tetrahedra and SbSe3/2 trigonal pyramids in studied glasses. The tellurium atoms are forming SbSe2Te and SbSeTe2 distorted pyramids. The strong luminescence corresponding to 4f transitions in Pr3+ ions was found in spectral regions (1100–1450 nm, 1500–1700 nm, 1750–2000, 2000–2600 nm and 3600–5200 nm; λexc=980, 1050 and 1550 nm). The intensities of luminescence bands depend on their composition. The prepared glasses are promising candidates for infrared luminescence applications in NIR and MID IR region up to λ≈5200 nm. High index of refraction and high value of third-order non-linear optical susceptibility χ(3) (≈300 times higher than χ(3) for SiO2) are promising for application of these glasses in optoelectronic devices. Good glass forming parameters are perspective for preparation of fibers.