Title of article :
High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex
Author/Authors :
Qi Wang، نويسنده , , Junsheng Yu، نويسنده , , Juan Zhao، نويسنده , , Jun Wang، نويسنده , , Ming Li، نويسنده , , Zhiyun Lu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
4
From page :
870
To page :
873
Abstract :
Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C2ʹ]iridium(III) (acetylacetonate) [(fbt)2Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt)2Ir(acac). The results are appealing towards the development of “easy-to-make” OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer.
Keywords :
Balanced carrier injection , Phosphorescent organic light-emitting device , Red iridium complex , Quench-resistant
Journal title :
Journal of Luminescence
Serial Year :
2013
Journal title :
Journal of Luminescence
Record number :
1261957
Link To Document :
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