Author/Authors :
Fengyi Jiang، نويسنده , , Weihua Liu، نويسنده , , Youqun Li، نويسنده , , Wenqing Fang، نويسنده , , Chunlan Mo، نويسنده , , Maoxing Zhou، نويسنده , , Hechu Liu، نويسنده ,
Abstract :
Junction temperature is one of the key parameter of light emitting diodes (LEDs). The junction temperature characteristic of GaN-based blue LEDs on Si substrate was first reported. The results indicated that the junction temperature of GaN LEDs on Si substrate is lower than that of GaN LEDs on sapphire, which is attributed to the good thermal conductivity of Si substrate.
Keywords :
GaN , Si substrate , LED , Junction temperature
