EPR and photoacoustic studies on 30 kev H+ ion-implanted n-GaAs

Electron paramagnetic resonance (EPR) measurements are carried out on the 30 keV H+ion-implanted, Si-doped GaAs(1 0 0) for various doses from 1014 to 1017 cm−2. The results are correlated with photoacoustic and photoluminescence measurements. All the measurements confirm the sign change of charge carrier at a dose of 1015 cm−2.