Title of article :
Room temperature luminescence in CuI/AgI quantum dots
Author/Authors :
T.H. Wei، نويسنده , , C.W. Chen، نويسنده , , L.C. Hwang، نويسنده , , P.L. Tu، نويسنده , , T.C. Wen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
Room temperature luminescence in a CuI/AgI glass system is investigated by irradiating the system at 410 nm (3.02 eV). The spectrum peaks at 635 nm (1.95 eV) and 700 nm (1.77 eV), while the intensity is significantly enhanced (centered at 635 nm) by increasing the amount of AgI. We propose a model based on an increase in the AgI:Cu+ species at higher AgI concentration at which the red emission is attributed to the radiative recombination from carriers trapped at the donor sites (e.g., interstitial silver ions) and the acceptor sites (e.g., a vacancy-compensated divalent cation). The PL efficiency is also estimated by comparison with a standard rhodamine B solution.
Keywords :
AgI:Cu+ nanocrystals , CuI/AgI quantum dots , Holes trapped in vacancy-compensated metal ions
Journal title :
Journal of Luminescence
Journal title :
Journal of Luminescence