Title of article
Exciton states and interband optical transitions in ZnO/MgZnO quantum dots
Author/Authors
S.Y. Wei، نويسنده , , L.L. Wei، نويسنده , , C.X. Xia *، نويسنده , , X. Zhao، نويسنده , , Y. Wang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
6
From page
1285
To page
1290
Abstract
Within the framework of the effective-mass approximation, the exciton states confined in wurtzite ZnO/MgZnO quantum dot (QD) are calculated using a variational procedure, including three-dimensional confinement of carriers in the QD and the strong built-in electric field effect due to the piezoelectricity and spontaneous polarizations. The exciton binding energy and the electron–hole recombination rate as functions of the height (or radius) of the QD are studied. Numerical results show that the strong built-in electric field leads to a remarkable electron–hole spatial separation, and this effect has a significant influence on the exciton states and optical properties of wurtzite ZnO/MgZnO QD.
Keywords
Quantum dot , Interband optical transitions , Built-in electric field , The exciton states
Journal title
Journal of Luminescence
Serial Year
2008
Journal title
Journal of Luminescence
Record number
1263527
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