Author/Authors :
interferometry
S. Bychikhina، نويسنده , ,
V. Dubeca، نويسنده , ,
M. Litzenbergera، نويسنده , ,
D. Poganya، نويسنده , ,
E. Gornika، نويسنده , ,
G. Groosb، نويسنده , ,
K. Esmarkb، نويسنده , ,
M. Stecherb، نويسنده , ,
W. Stadlerb، نويسنده , ,
H. Gieserc، نويسنده , ,
H. Wolfc، نويسنده ,
Abstract :
Switching dynamics and current flow homogeneity under very-fast TLP (vf-TLP) stress is investigated in smart power and CMOS technology ESD protection devices by means of optical transient interferometric mapping (TIM) techniques with sub-nanosecond time resolution. Comparison between the device behavior under vf- and conventional TLP stress is discussed. The sub-ns time resolution enables a detailed insight into the triggering behavior of protection elements.
Keywords :
Semiconductordevicetesting , Electrostaticdischarges(ESD) , Opticalmapping , Photothermaleffects , Thermoopticeffects
