Sol–gel processing for epitaxial growth of ZrO2 thin films on Si(100) wafers

High quality epitaxial thin films of t-ZrO2, were fabricated on Si(100) wafers via sol–gel processing. The thin films exhibited high epitaxial quality (FWHM∼0.3°) and excellent surface morphology (rms roughness∼14 Å); thus, they are expected to be very useful as epitaxial buffer layers.