Structure and electrical properties of multilayer PZT films prepared by sol–gel processing

Multilayer PZT(Zr:Ti=52:48) films were prepared by the repeated process of spin-coating and firing at 600°C of a PZT sol with various heating rates between 20 and 200°C min−1. Their structural and dielectric properties were examined. The multilayer film prepared with the heating rate of 50°C min−1 shows the highest dielectric constant and a smooth surface with no surface cracks. High-resolution TEM (HRTEM) observations of an as-deposited PZT film indicate nucleation of perovskite and pyrochlore crystals in the amorphous matrix. The perovskite crystals are found to form through the initial construction of {110} planes.