Formation of SiC via carbothermal reduction of a carbon-containing mesoporous MCM-48 silica phase: a new route to produce high surface area SiC

Infiltration of carbon into mesoporous silica, used as a host structure, was peformed for the preparation of high surface area SiC. Mesopores of MCM-48 silica material were filled with pyrolytic carbon by chemical vapor infiltration using propylene as carbon precursor. Carbothermal reduction of the as-prepared SiO2/C material in a temperature range 1250–1450 °C and in inert atmosphere led to an almost complete conversion into high surface area SiC material (120 m2/g). Characterisations were performed by SEM, powder XRD, DRIFT spectroscopy and N2 adsorption/desorption measurements on the SiC, SiO2/C and the mesorganized carbon phase.