Nb doping effects on ferroelectric and electrical properties of ferroelectric Bi3.25La0.75(Ti1−xNbx)3O12 ceramics

Nb-doped Bi3.25La0.75(Ti1−xNbx)3O12 ceramics were prepared by a solid state reaction. A crystal structure with Bi-layered structured ferroelectrics is confirmed by a X-ray diffraction (XRD). With increasing Nb concentration, the Curie temperature decreased, and the dielectric constant peak broaden. The remanent polarization (Pr) increased at a small Nb doping of x=0.03–0.05. At temperature above 120 °C, the electrical conductivity decreased by Nb doping. For the high-valence Nb5+ substitution for Ti4+ in BLT ceramic, the effects of Nb doping on ferroelectric and electrical properties were investigated by the dielectric constant, ferroelectric P–E hysteresis loop and electrical conductivity.