Title of article :
Effect of rapid thermal annealing on residual stress in lead titanate thin film by chemical solution deposition
Author/Authors :
Tomoya Ohno، نويسنده , , Hisao Suzuki، نويسنده , , Desheng Fu، نويسنده , , Minoru Takahashi، نويسنده , , Toshitaka Ota، نويسنده , , Kenji Ishikawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
1487
To page :
1491
Abstract :
The effect of annealing process on the residual stress in the lead titanate (PT) thin film was investigated in this study. The residual stress in the films with different annealing process was calculated from the phonon mode shift. As a result, the residual stress in the films deposited by the rapid thermal annealing was larger than that in the films by normal annealing process. In addition, the large residual stress in the films by the rapid thermal annealing was relaxed by the post annealing to the value in the film deposited by normal annealing. Moreover, the dielectric behavior of the films obeyed the modified Devon Shire theory which was proposed in our previous study.
Keywords :
A. Sol–gel processes , C. Dielectric properties , E. Membranes , Residual stress
Journal title :
Ceramics International
Serial Year :
2004
Journal title :
Ceramics International
Record number :
1268886
Link To Document :
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