Retention characteristics of V-doped Bi3.25La0.75Ti3O12 thin film

Bi3.25La0.75Ti3O12 (BLT) and V-doped BLT (BLTV) thin films are prepared on Pt/Ti/SiO2/Si substrates by a pulsed laser deposition (PLD) method. Ferroelectric and polarization retention characteristics are investigated by leakage current density–electric field (J–E) and P–E hysteresis loops. The single phases with Bi-layered perovskite structure are confirmed by XRD. The increase of leakage current of BLT and BLTV films are produced at 100 kV/cm and 160 kV/cm, respectively. The long-time retention dispalys a stretched exponential decay for BLT film while a logarithmic decay for BLTV film. After a retention time of 1×105 s, the retention loss of BLT and BLTV films were about 14 and 7% of the initial value measured at t=1 s, respectively. BLTV thin film exhibits a retention-free characteristics. The effect of vanadium doping on the retention properties of BLT film will be discussed in detail.