Title of article :
The influence of reaction parameters on the free Si and C contents in the synthesis of nano-sized SiC
Author/Authors :
S. Larpkiattaworn، نويسنده , , P. Ngernchuklin، نويسنده , , W. Khongwong، نويسنده , , N. Pankurddee، نويسنده , , S. Wada، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Uniform nano-sized beta-silicon carbide (β-SiC) powder was synthesized from the reaction of silicon (Si) and carbon black (C). Mixed Si and C-black powder were pressed into pellets and the influence of four parameters, temperature (1250, 1300 and 1350 °C), heating rate (20 and 50 °C/min), soaking time (1 and 3 h) and atmosphere (vacuum and argon), were tested. It was found that higher temperatures, higher heating rates and longer soaking times in a vacuum system lead to lower free Si content in the SiC powder created. Temperature was the parameter with the greatest influence on the Si content of the SiC powder. This study also found that the Si–C reaction occurs through gas–solid (SiO–C) and solid–solid (Si–C) reactions that occur simultaneously.
Keywords :
SiC powder , Synthesis , Si–C reaction , Free Si , Reaction parameters
Journal title :
Ceramics International
Journal title :
Ceramics International