Memory characteristics of multi-stacked thin films using La2O3 and LaAlO3 as charge trap layer

Al2O3/La2O3/Al2O3 (ALA) and Al2O3/LaAlO3/Al2O3 (A/LAO/A) multi-stacked films were deposited on Si substrates by MOCVD. No interfacial layers (AlxSiyOz) were observed in TEM images, and the thickness ratio of the tunnel oxide (bottom oxide), trap layer (middle oxide), and blocking oxide (top oxide) was about (1:1.3:3) in both films. Memory windows of the (ALA) and (A/LAO/A) films were 1.31 V and 3.13 V, respectively. Each value in the program/erase cycle test was maintained for up to 104 cycles.