A study on the electrical properties of fluorine doped direct-patternable SnO2 thin films

Direct-patternable fluorine doped SnO2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO2 films can be improved by fluorine doping.