Title of article :
Phase stability of Ti3SiC2 at high pressure and high temperature
Author/Authors :
Jiaqian Qin، نويسنده , , Duanwei Zhu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
7
From page :
9361
To page :
9367
Abstract :
Phase stability of Ti3SiC2 was studied under high pressure and high temperature using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. From the results obtained, the decomposition temperature of Ti3SiC2 decreases quickly against pressure, and the low temperature limits of phase segregation of the sample Ti3SiC2 lie between 1100 °C and 1000 °C, 1000 °C and 900 °C, 900 °C and 800 °C, under high pressures of 3, 4 and 5 GPa, respectively. Ti3SiC2 decomposes to generate TiC, SiC, and TiSix. On the basis of the experimental results, we suggest two decomposition models to explain the phase decomposition of Ti3SiC2 at high pressure and high temperature.
Keywords :
Ti3SiC2 , decomposition , High pressure and high temperature
Journal title :
Ceramics International
Serial Year :
2013
Journal title :
Ceramics International
Record number :
1275375
Link To Document :
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