• Title of article

    Phase stability of Ti3SiC2 at high pressure and high temperature

  • Author/Authors

    Jiaqian Qin، نويسنده , , Duanwei Zhu، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    7
  • From page
    9361
  • To page
    9367
  • Abstract
    Phase stability of Ti3SiC2 was studied under high pressure and high temperature using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. From the results obtained, the decomposition temperature of Ti3SiC2 decreases quickly against pressure, and the low temperature limits of phase segregation of the sample Ti3SiC2 lie between 1100 °C and 1000 °C, 1000 °C and 900 °C, 900 °C and 800 °C, under high pressures of 3, 4 and 5 GPa, respectively. Ti3SiC2 decomposes to generate TiC, SiC, and TiSix. On the basis of the experimental results, we suggest two decomposition models to explain the phase decomposition of Ti3SiC2 at high pressure and high temperature.
  • Keywords
    Ti3SiC2 , decomposition , High pressure and high temperature
  • Journal title
    Ceramics International
  • Serial Year
    2013
  • Journal title
    Ceramics International
  • Record number

    1275375