Synthesis and microwave dielectric properties of Zn2SnO4 ceramics

Zn2SnO4 ceramics were synthesized by the solid-state method. B2O3 was added into the system to lower the sintering temperature. B2O3-doped Zn2SnO4 materials were characterized by X-ray diffraction (XRD), electron microscopies (SEM/TEM/HRTEM/EDS), Raman and XPS spectroscopies. The inverse-spinel Zn2SnO4 ceramics (containing 1 wt% B2O3) sintered at 975 °C exhibited good microwave dielectric properties: εr=9.3, Q×f=62,000 GHz and τf=−50 ppm/°C. Zn2SnO4 ceramics with low sintering temperatures are promising candidate materials for low-temperature cofired millimeter-wave devices.